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Optimization of Annealing Conditions for ZnO-based Thin Films Grown Using MOCVD

Published online by Cambridge University Press:  10 September 2014

Anas Mazady ,
Abdiel Rivera  and
Mehdi Anwar
Anas Mazady
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
Abdiel Rivera
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
Mehdi Anwar*
Affiliation:
Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269
*
*Email: [email protected]
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Abstract

In this work, effects of thermal annealing on the structural and optical properties of ZnO thin films grown on p-Si and GaN substrates using metalorganic chemical vapor deposition (MOCVD) are investigated. Annealing at 600 °C results in optimum crystal and optical qualities of the ZnO thin films on both substrates. Smaller lattice mismatch between grown ZnO epitaxial layer on GaN substrates results in better film morphology as compared to p-Si substrates. Higher annealing temperature along with a slower thermal ramp provides better crystal quality of ZnO thin films on both substrates. Annealing ZnO thin films at 700 °C with a slower thermal ramp results in better crystal quality as is evident from a 56% reduction in the full-width at half maximum (FWHM) of the (002) peak compared to the as-grown films. The optical quality also enhances with a slower annealing rate. The determination of the optimum annealing conditions for different substrates has important implications in fabricating optimized and efficient ZnO based electronics.

Keywords

thin filmoxidechemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 3 - 8
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Jiang, X., Wong, F., Fung, M. and Lee, S., “Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices,” Appl. Phys. Lett., vol. 83, pp. 1875–1877, 2003.CrossRefGoogle Scholar
Chen, Z., Yamamoto, S., Maekawa, M., Kawasuso, A., Yuan, X. and Sekiguchi, T., “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements,” J. Appl. Phys., vol. 94, pp. 4807–4812, 2003.CrossRefGoogle Scholar
Look, D. C., Reynolds, D., Hemsky, J. W., Jones, R. and Sizelove, J., “Production and annealing of electron irradiation damage in ZnO,” Appl. Phys. Lett., vol. 75, pp. 811–813, 1999.CrossRefGoogle Scholar
Wang, Y., Lau, S., Zhang, X., Hng, H., Lee, H., Yu, S. and Tay, B., “Enhancement of near-band-edge photoluminescence from ZnO films by face-to-face annealing,” J. Cryst. Growth, vol. 259, pp. 335–342, 2003.CrossRefGoogle Scholar
Sengupta, J., Sahoo, R., Bardhan, K. and Mukherjee, C., “Influence of annealing temperature on the structural, topographical and optical properties of sol–gel derived ZnO thin films,” Mater Lett, vol. 65, pp. 2572–2574, 2011.CrossRefGoogle Scholar
Caglar, Y., Ilican, S., Caglar, M., Yakuphanoglu, F., Wu, J., Gao, K., Lu, P. and Xue, D., “Influence of heat treatment on the nanocrystalline structure of ZnO film deposited on p-Si,” J. Alloys Compounds, vol. 481, pp. 885–889, 2009.CrossRefGoogle Scholar
Mahmood, A., Ahmed, N., Raza, Q., Khan, T. M., Mehmood, M., Hassan, M. and Mahmood, N., “Effect of thermal annealing on the structural and optical properties of ZnO thin films deposited by the reactive e-beam evaporation technique,” Phys. Scripta, vol. 82, pp. 065801, 2010.CrossRefGoogle Scholar
Lin, Y., Xie, J., Wang, H., Li, Y., Chavez, C., Lee, S., Foltyn, S., Crooker, S., Burrell, A. and McCleskey, T., “Green luminescent zinc oxide films prepared by polymer-assisted deposition with rapid thermal process,” Thin Solid Films, vol. 492, pp. 101–104, 2005.CrossRefGoogle Scholar
Gupta, V. and Mansingh, A., “Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film,” J. Appl. Phys., vol. 80, pp. 1063–1073, 1996.CrossRefGoogle Scholar
Puchert, M., Timbrell, P. and Lamb, R., “Postdeposition annealing of radio frequency magnetron sputtered ZnO films,” Journal of Vacuum Science & Technology A, vol. 14, pp. 2220–2230, 1996.CrossRefGoogle Scholar
Lee, Y., Hu, S., Water, W., Tiong, K., Feng, Z., Chen, Y., Huang, J., Lee, J., Huang, C. and Shen, J., “Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates,” J Lumin, vol. 129, pp. 148–152, 2009.CrossRefGoogle Scholar
Lee, G., Yamamoto, Y., Kourogi, M. and Ohtsu, M., “Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films,” Thin Solid Films, vol. 386, pp. 117–120, 2001.CrossRefGoogle Scholar