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Optimal Growth of InGaAs/InAlAs Distributed Bragg Reflectors Lattice-matched on InP Substrates

Published online by Cambridge University Press:  10 February 2011

S. W. Choi ,
J. H. Lee ,
J. H. Baek ,
E. H. Lee  and
B. Lee
S. W. Choi
Affiliation:
Electronics and ‘Telecommunications Research Institute P.O. Box 106, Yusong, Taejon 305-600, Republic of Korea
J. H. Lee
Affiliation:
Electronics and ‘Telecommunications Research Institute P.O. Box 106, Yusong, Taejon 305-600, Republic of Korea
J. H. Baek
Affiliation:
Electronics and ‘Telecommunications Research Institute P.O. Box 106, Yusong, Taejon 305-600, Republic of Korea
E. H. Lee
Affiliation:
Electronics and ‘Telecommunications Research Institute P.O. Box 106, Yusong, Taejon 305-600, Republic of Korea
B. Lee
Affiliation:
Electronics and ‘Telecommunications Research Institute P.O. Box 106, Yusong, Taejon 305-600, Republic of Korea
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Abstract

Distributed Bragg reflectors composed of InGaAs/InAlAs alternating layers have been grown on InP substrates by MOCVD. To obtain high performance, the growth condition has been traded off between surface roughness and crystal quality. Using in-situ laser reflectometry, the precise control of layer thickness and composition has been achieved for reproducible DBR growth. The optimal mirror performance and sharp interfaces have been observed in the DBR grown at 650'C. In order to avoid band-edge absorption 6% of Al has been added to In 0.53Ga0.47As to produce quarternary In0.53Ga 0.41Al 0.06As/InAlAs Bragg reflector exhibiting high reflectivity at 1.55 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 331
Copyright
Copyright © Materials Research Society 1996

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