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Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides

Published online by Cambridge University Press:  10 February 2011

R. P. Pawlowski ,
C. Theodoropoulos ,
T.J. Mountziaris ,
H.K. Moffat ,
J. Han  and
E. J. Thrush
R. P. Pawlowski
Affiliation:
SUNY at Buffalo, Department of Chemical Engineering, Buffalo, NY 14260. Sandia National Laboratories, Albuquerque, NM 18175
C. Theodoropoulos
Affiliation:
SUNY at Buffalo, Department of Chemical Engineering, Buffalo, NY 14260.
T.J. Mountziaris*
Affiliation:
SUNY at Buffalo, Department of Chemical Engineering, Buffalo, NY 14260.
H.K. Moffat
Affiliation:
Sandia National Laboratories, Albuquerque, NM 18175
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 18175
E. J. Thrush
Affiliation:
Thomas Swan Scientific Equipment Ltd., Cambridge, United Kingdom
*
1Corresponding Author. E-mail: [email protected]
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Abstract

Metalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of vertical rotating disk and stagnation flow MOVPE reactors in order to achieve film thickness uniformity over large area substrates. Gas inlets that preserve the axial symmetry and enable alternating feeding of the precursors through coaxial rings were studied. The growth of GaN films from trimethyl-gallium and ammonia was used as a typical example. A fundamental reaction-transport model of the MOVPE process including gas-phase reactions and gas-surface interactions has been developed. The model was validated through comparison with growth rate data obtained from both research-scale and industrial-scale reactors. Performance diagrams for industrial-scale stagnation flow and rotating disk reactors were developed by varying the reactor geometry and operating conditions to identify regions of uniform film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 159
Copyright
Copyright © Materials Research Society 2000

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References

[1] Nakamura, S.. Present and future aspects of blue light emitting devices. Applied Surface Science, 113/114:689–697, 1997.10.1016/S0169-4332(96)00870-7Google Scholar
[2] Kisker, D. W. and Kuech, T. F.. The principles and practice of organometallic vapor phase epitaxy. In Hurle, D. T. J., editor, Handbook of Crystal Growth, volume 3A, chapter 3. Elsevier Science, Amsterdam, 1993.Google Scholar
[3] Gupta, V., Theodoropoulos, C., Peck, J. D., and Mountziaris, T. J.. Optimal design of stagnation flow MOVPE reactors with axisymmetric mulit-aperture inlets. In Semiconductor Process and Device Performance Modelling, volume 490 of Materials Research Society Symposium Proceedings, pages 161–166. Materials Research Society, 1998.Google Scholar
[4] Shadid, J. N., Moffat, H. K., Hutchinson, S. A., Hennigan, G. L., Devine, K. D., and Salinger, A. G.. MPSalsa: A finite element computer program for reacting flow problems - part I theoretical development. Technical report, Sandia National Laboratories, Albuquerque, New Mexico 87185, 1996. SAND95-2752.10.2172/237399Google Scholar
[5] Kee, R., Rupley, F. M., Meeks, E., and Miller, J. A.. Chemkin-III: A fortran chemical kinetics package for the analysis of gas-phase chemical and plasma kinetics. Technical report, Sandia National Laboratories, Albuquerque, New Mexico 87185, 1996. SAND96-8216.10.2172/481621Google Scholar
[6] Theodoropoulos, C., Mountziaris, T. J., Moffat, H. K., and Han, J.. Design of gas inlets for GaN growth by MOVPE. Journal of Crystal Growth, Accepted February 2000.Google Scholar