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Optimal Annealing Conditions of InGaAs Films for Selective Area Epitaxy of Quantum Dots by Indium Segregation

Published online by Cambridge University Press:  10 February 2011

Terence S. Yeoh ,
Reuel B. Swint ,
Victor C. Elarde  and
James J. Coleman
Terence S. Yeoh
Affiliation:
Department of Materials Science and Engineering, University of Illinois Urbana, IL 61801, U.S.A.
Reuel B. Swint
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
Victor C. Elarde
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
James J. Coleman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
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Abstract

The surface of strained InGaAs films on GaAs for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. Various InxGa1-xAs films were annealed at temperatures between 400°C - 800°C. Significant indium desorption was found to occur at temperatures above 550°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.36
Copyright
Copyright © Materials Research Society 2003

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References

[1] Yeoh, T. S., Swint, R. B., Gaur, A., Elarde, V. C., and Coleman, J. J., “Selective growth of InAs quantum dots by metalorganic chemical vapor deposition,” Selected Topics in Quantum Electronics, vol. 8, pp. 833–838, 2002.Google Scholar
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