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Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire

Published online by Cambridge University Press:  01 February 2011

Fevzi Erdem Arkun ,
Nadia A El-Masry ,
John Muth ,
Xiyao Zhang ,
Amr Mahrouse ,
John Zavada  and
Salah M Bedair
Fevzi Erdem Arkun
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 4327 Avent Ferry Rd Apt 4, Raleigh, NC, 27606, United States, 919 9312389
Nadia A El-Masry
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27695, United States
John Muth
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
Xiyao Zhang
Affiliation:
[email protected], North Carolina State University, Physics, Raleigh, NC, 27695, United States
Amr Mahrouse
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
John Zavada
Affiliation:
[email protected], Army Research Office, Durham, NC, 27709, United States
Salah M Bedair
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
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Abstract

We demonstrate optical transmission measurements performed on 1.2 μm thick GaMnN films grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. According to the data acquired from these measurements, Mn forms a deep acceptor band at 1.4 eV above the valance band of GaMnN. Full width at half maximum of this absorption band increases from 107 meV to 198meV as the Mn concentration increases from 0.3% to 1.6 %; which indicates that this band becomes wider as the concentration of Mn increases in the lattice. A broad absorption band starting at 1.9eV and extending to the band edge of GaMnN was also determined. This was attributed to the transition from the Mn energy band to the conduction band edge of GaMnN. Absorption at both of these bands scales with the Mn concentration and thickness of the films. The effect of co-doping of GaMnN films with magnesium on the transmission spectra was also investigated. The absorption band initially observed at 1.4 eV was shifted to 1.6 eV as a result of introduction of Magnesium into the lattice of GaMnN. From these results we conclude that Mn is incorporated in the lattice and forms an energy band in the bandgap of GaMnN. The width of this energy band is also a function of the Mn concentration in GaMnN.

Keywords

chemical vapor deposition (CVD) (deposition)magnetic propertiesoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-02
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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