Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-12-03T00:34:40.031Z Has data issue: false hasContentIssue false

Optical Study of PbTiO3 Thin Films Grown by Sol-Gel Technique

Published online by Cambridge University Press:  15 February 2011

E. Ching-Prado
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931–3343
R.W. Tao
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931–3343
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, P.R. 00931–3343
A.S. Bhalla
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
Get access

Abstract

Thin films of PbTiO3 were prepared by sol-gel method on platinum-coated-Si and Al2O3 and annealed at 600°C. The annealing time of the films, deposited on Si, were 6 and 12 hours, respectively. Micro-Raman spectra show high background in the low frequency region and the bands are broader with respect to the single crystal work, which indicates the polycrystalline nature of the samples. The film annealed for 12 hours showed more pronounced peaks in the spectra when compared to the film annealed for 6 hours. Micro-Raman measurements on different spots in the film indicate that the PT film on platinum-coated silicon substrate is highly inhomogeneous. In the case of PT/Al2O3 such studies show a homogeneous film. The frequencies of most of the modes are decreased, which is associated to grains under stress. The nature of the stress is discussed. Although film stress may not be homogeneous, a stress value around 1.2 GPa is estimated from Raman data. XRD and SEM techniques were used for structural characterization.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1- Wood, V.E., Busch, J. R., Ramamurthi, S. D., and Swartz, S.L., J. Appl. Phys., 71 4557 (1992).Google Scholar
2- Ching-Prado, E., Reynés, A., Katiyar, R.S., Majumder, S., Agrawal, D.C., Mal. Res. Soc. Symp. 343 469 (1994).Google Scholar
3- Jaccard, A., Känzig, W., and Petex, M., Helv. Phys. Acta, 26 521 (1953).Google Scholar
4- Kanata, T., Yoshikawa, T., and Kubota, K., Solid State Comm., 62 765 (1987).Google Scholar
5- Ishikawa, K., Yoshikawa, K., and Okada, N., Phys. Rev. B, 37 5852 (1988).Google Scholar
6- Nakamura, T., Takashige, M., Terauchi, H., Miura, Y., Lawless, W., Jpn. J Appl Phys., 23 1265 (1984).Google Scholar
7- Taguchi, I., Pignolet, A., Wang, L., Proctor, M., Levy, F., and Schmid, P.E., J. Appl. Phys., 73 394 (1993).Google Scholar
8- Desu, S.B.., J. Elecirochem. Soc., 140 2981 (1993).Google Scholar
9- Sanjurjo, J.A., López Cruz, E., and Burns, G., Phys. Rev. B, 28 7260 (1983).Google Scholar
10- Qu, B., Kong, D., Zhang, P., and Wang, Z., Ferroelecthcs, 145 39 (1993).Google Scholar
11- Madsen, L.D., and Weaver, L., Mat. Res. Soc. Symp. Proc. 310 385 (1993).Google Scholar
12- Nelmes, R.J. and Katrusiak, A., J. Phys. C: Solid St. Phys., 19 1725 (1986).Google Scholar
13- Seth, V.K., and Schulze, W.A., Ferroelecthcs, 112 283 (1990).Google Scholar