Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-02T23:24:04.978Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Epitaxial Plt Thin Films

Published online by Cambridge University Press:  15 February 2011

Y. Kim ,
A. Erbil ,
L. A. Boatner ,
L. Steingart ,
T. Mensah  and
S. Hiamang
Y. Kim
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332
A. Erbil
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak, Ridge, TN 37831-6056
L. Steingart
Affiliation:
Metricon Corporation, Pennington, NJ 08534
T. Mensah
Affiliation:
Department of Physics, Clark Atlanta University, Atlanta, GA 30314
S. Hiamang
Affiliation:
Department of Physics, Clark Atlanta University, Atlanta, GA 30314
Get access

Abstract

Metalorganic chemical vapor deposition (MOCVD) was used to prepare epitaxial or highly oriented PLT (Pb1-xLaxTiO3) thin films with x in the range of 0.21 to 0.34. The growth of PLT films resulted in three-dimensional epitaxial heterostructures on (100) surface of the MgO and the KTaO3 substrates. The PLT film grown on the KTaO3 (100) substrate has a significantly lower minimum channeling yield compared to that on the MgO (100) substrate because of the smaller lattice mismatch. The thickness and the refractive indices in the wavelength range of 435 to 1,523 nm were measured by the prism coupling method. The measured film thickness of 570 nm was in good agreement with that from RBS measurements. The refractive index of PLT film is smaller than that of PbTiO3, its difference at 632.8 nm is about 2.5 %. The dispersion of the refractive index was well fitted to a Sellmeier dispersion formula.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 267
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., J. Appi. Phys. 60 (2), 736 (1986).Google Scholar
2. Okuyama, M., Usuki, T., and Hamakawa, Y., Appl. Phys. 21, 339 (1980).Google Scholar
3. Mckee, R. A., Walker, F. J., Specht, E. D., Jellisen, G. E., and Boatner, L. A., Phys. Rev Lett. 72, 2741 (1994).Google Scholar
4. Doolittle, L. R., Nuci. Instrum. Method Phys. Res. Sect. B 9, 344 (1985).Google Scholar
5. Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
6. Fox, G. R., Krupanidhi, S. B., More, K. I., and Allard, L. F., J. Mater. Res., Vol.7, 3039 (1992).Google Scholar
7. DiDomenico, M. Jr. and Wemple, S. H., J. Appl. Phys. 40, 720 (1969).Google Scholar