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OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERS

Published online by Cambridge University Press:  28 February 2011

P. L. GOURLEY ,
R. M. BIEFELD  and
L. R. DAWSON
P. L. GOURLEY
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. M. BIEFELD
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
L. R. DAWSON
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have developed a convenient photoluminescence microimaging technique to probe misfit dislocations in epitaxially grown semiconductor alloys and multilayers. Using this technique, we have examined the microscopic optical quality of thick (~ 1 μm ) III-V semiconductor epitaxial layers, mismatched to their substrates. The layers includeseveral kinds of [100] strained-layer superlattices (GaP/GaAsxP1-x on GaP and GaAs/GaAs. P on GaAs grown by MOCVD, and GaAs/In Ga1-x As on GaAs grown by MBE) and associated alloys. For each type of superlalti e, we have studied a large number of samples corresponding to different compositions and layer thicknesses. The results show that misfit dislocations can be completely eliminated in the uppermost layers of the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces to block threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 229
Copyright
Copyright © Materials Research Society 1986

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References

1.see the review of strained-layer superlattices, and references therein, by Osbourn, G. C., Gourley, P. L., Fritz, I. J., Biefeld, R. M., Dawson, L. R., and T. E. Zipperian in Semiconductors and Semimetals, edited by Willardson, R. K. and Beer, A. C., Academic Press, New York, in press.Google Scholar
2. Gourley, P. L., Biefeld, R. M., and Dawson, L. R., Appl. Phys. Lett. 47, 484 (1985).Google Scholar
3. Hornstra, J., J. Phys. Chem. Solids, 5, 29 (1958).CrossRefGoogle Scholar
4. Matthews, J. W. and Blakeslee, A. E., J. Vac. Sci. Technol. 14, 989 (1977), and references therein. Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
5.The electronic mobility for these same samples has been measured, see Fritz, I. J., Pioraux, S. T., Dawson, L. R., Drummond, T. J., Laidig, W. D., and Anderson, N. G., Appl. Phys. Lett. 46, 987 (1985).CrossRefGoogle Scholar
6. Blakeslee, A. E., Kibbler, A., Wanlass, M. W., and Biefeld, R. M., unpublished.Google Scholar