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Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Joshua David Caldwell ,
Paul B Klein ,
Orest J Glembocki ,
Robert E Stahlbush ,
Kendrick X Liu ,
Karl D Hobart  and
Fritz Kub
Joshua David Caldwell
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Code 6881, Washington, DC, 20375, United States, (202)404-6209, (202)404-1271
Paul B Klein
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Orest J Glembocki
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Robert E Stahlbush
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Kendrick X Liu
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Karl D Hobart
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
Fritz Kub
Affiliation:
[email protected], Naval Research Laboratory, Electronic Science and Technology Division, 4555 Overlook Ave, S.W., Washington, DC, 20375, United States
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Abstract

Here we present optical beam induced current, electroluminescence, time resolved photoluminescence and current-voltage measurements on several 4H-SiC PiN diodes containing in-grown stacking faults (IGSFs). These defects were observed to act as either current shorts, creating a direct electrical contact between the p+ and n+ layers, or as a current barrier. Carrier lifetime measurements verify that the change in behavior is indeed associated with changes in the conductivity of the material in the vicinity of the defect and not due to local changes in the carrier lifetime. The IGSFs discussed here appear to differ from those previously discussed in the literature and may constitute a new, multi-layered IGSF.

Keywords

defectssemiconductingluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B03-05
Copyright
Copyright © Materials Research Society 2006

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