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Optical Characterization Of GaAs/Si: Spectral Features in the Excitonic Region

Published online by Cambridge University Press:  28 February 2011

S. Zemon ,
S. K. Shastry ,
C. Jagannath ,
P. Norris  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
S. K. Shastry
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
P. Norris
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
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Abstract

Using 4.2 K selective photoluminescence (PL) excitation and PL excitation spectroscopy, the n = 2 excited state of the light-hole exciton is observed for the first time in GaAs/Si. The excited state is about 3 meV above the ground state, similar to exciton results for GaAs/GaAs. A spectral width of 1.8 meV is observed for the ground state transition, the narrowest yet reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 261
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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