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Optical and Structural Properties of Zinc-oxide Thin Film Deposited by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

Tamiko Ohshima ,
Raj K. Thareja ,
Yukihiko Yamagata ,
Tomoaki Ikegami  and
Kenji Ebihara
Tamiko Ohshima
Affiliation:
Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, JAPAN
Raj K. Thareja
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, JAPAN
Yukihiko Yamagata
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, JAPAN
Tomoaki Ikegami
Affiliation:
Graduate School of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, JAPAN
Kenji Ebihara
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, JAPAN
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Abstract

We report optical and structural properties of ZnO films deposited by pulsed laser deposition technique on silicon (100) n-type, quartz, sapphire, and corning glass substrates. We have studied the influence of the deposition parameters, such as substrate temperature, oxygen pressure, and laser fluence on the properties of the grown films. Dependence of nanocrystallites on temperature of substrate and ambient gas pressure is investigated. ZnO plasma created at varying fluence of KrF laser (248 nm) on the target was investigated using optical emission spectroscopy and 2-d images of the expanding plumes at various pressures of the ambient gas. X-ray diffraction, atomic force microscopy, electron probe micro-analyzer, and spectro-photometry were used to characterize as grown films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.20
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Dinh, L., Schildbach, M. A., Balloch, M., McLean, W. II, J Apl Phys. 86, 1149–1152 (1999).Google Scholar
2. Ryu, Y. R., Zhu, S., Budai, J. D., Chandrasekhar, H. R., Miceli, P. F., and White, H. W., J. Appl. Phys. 88, 201–204 (2000).Google Scholar
3. Vispute, R. D, Talyansky, V., Sharma, R. P., Choopan, S., Downes, M., Venkatesan, T., Li, Y. X., Salamanca-Riba, L. G., Iliad, A. A., Jones, K. A., McGarrity, J., Appl. Surf. Sci. 127–129, 431–439 (1998).Google Scholar
4. Fujimura, N., Nishihara, T., Goto, S., Xu, J., and Ito, T., J. Cryst. Growth 130, 269–273 (1993).Google Scholar
5. Cullity, B. D. and Stock, S. R., Elements of X-ray Diffraction (3rd Edn, Prentice Hall, New Jersey) 167–171(2001).Google Scholar
6. Mitra, A. and Thareja, R. K., J. Appl. Phys. 89, 2025 (2001).Google Scholar
7. Ohshima, T., Thareja, R. K., Yamagata, Y., Ikegami, T., Ebihara, K., and Narayan, J., Sci. Tech. Adv. Mat. xx, xxxx (2001).Google Scholar