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Optical and Spectroscopic Ellipsometric Study of Indium Boron Nitride Sputtered Thin Films with Low Boron Concentration

Published online by Cambridge University Press:  04 April 2011

Mohammad A. Ebdah ,
Martin E. Kordesch ,
David C. Ingram ,
Hamad AlBrithen ,
Abdel-Rahman A. Ibdah  and
Kevin Cooper
Mohammad A. Ebdah
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.
Martin E. Kordesch
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.
David C. Ingram
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.
Hamad AlBrithen
Affiliation:
Physics and Astronomy Department, King Abdullah Institute for Nanotecnology, King Saud University, Riyadh, Saudi Arabia.
Abdel-Rahman A. Ibdah
Affiliation:
Department of Physics and Astronomy, the University of Toledo, Toledo, OH 43606, USA.
Kevin Cooper
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.
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Abstract

Amorphous indium boron nitride (a-InBN) thin films were successfully fabricated using radio frequency (RF) magnetron sputtering, and were deposited onto fused silica and c-Si(100) substrates. Sputtering was achieved using a target of polycrystalline B and In species with B/In nominal at.% ratio of 25/75 under the flow of nitrogen. The structure and composition of the films have been investigated by X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), respectively. The XRD patterns reveal that the sputtered films are amorphous, and the XPS confirms the presence of boron in the films in addition to an oxide overlayer. The optical absorption of samples grown on silica was obtained using spectrophotometry (SP) technique in the wavelength range (200 - 800) nm. Analysis of the absorption coefficients using the Tauc linear extrapolation gives an optical bandgap of 2.05 eV, indicating a higher bandgap comparing to the measured optical bandgap of a-InN (1.25 eV) due to doping with boron. Films grown on c-Si(100) were characterized by spectroscopic ellipsometry (SE) technique in the wavelength range of (300-1700) nm. The measured ellipsometric spectra are described well by a two-layer model structure, which consists of a transparent layer on top of an absorbing layer. The thicknesses and optical functions of the transparent and absorbing layers were obtained by analyzing the measured ellipsometric spectra, Ψ and Δ within the framework of the Cauchy–Urbach (CU) and Tauc–Lorentz (TL) models, respectively. While the overlayer is completely transparent over the measured range (k(λ) = 0), the absorbing layer underneath it exhibits a clear absorption above its optical bandgap of 2.15 eV, which is in a good agreement with the SP finding. There was an excellent agreement between the bandgap obtained as a fitting parameter from the optical model and that obtained by linear extrapolation using the empirical Tauc and Cody models for amorphous semiconductors.

Keywords

sputteringBoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc08-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Pilloud, D., Dehlinger, A.S., Pierson, J.F., Roman, A., and Pichon, L., Surf. Coat. Technol. 174-175, 338 (2003).Google Scholar
2. Ebdah, M. A. et al. ., Mater. Res. Soc. Symp. Proc. 1111, 1111–D04-12 (2008).Google Scholar
3. Ebdah, M. A., Hoy, D. R., and Kordesch, M. E., Mat. Res. Soc. Symp. Proc. 1151, 1151-SS03-05 (2009).Google Scholar
4. Pascual, E. et al. ., Diamond Relat. Mater., 5, 539 (1996).Google Scholar
5. Andujar, J. L. et al. ., Diamond Relat. Mater., 4, 657 (1995).Google Scholar
6. Woollam, J. A., Johs, B., Herzinger, C. M., Hilfiker, J., Synowicki, R., and , C. and Bungay, L., Proc. SPIE CR72, 3 (1999).Google Scholar
7. Ren, S. L., Rao, A. M., and Eklund, P. C., and Doll, G. L., Appl. Phys. Lett., 62, 1760 (1993).Google Scholar
8. Jellison, G. E., Modine, F. A., Doshi, P., and Rohatgi, A., Thin Solid Films 313–314, 193 (1998).Google Scholar
9. Herzinger, C. M., Johs, B., McGahana, W. A., Woollam, J. A., and Paulson, W., J. Appl. Phys. 83, 3323 (1998).Google Scholar
10. Capan, R., Chaure, N.B., Hassan, A.K., Ray, A.K., Semicond. Sci. Technol. 19, 198 (2004).Google Scholar
11. Jellison, G. E., Modine, F. A., Appl. Phys. Lett. 69, 371 (1996).Google Scholar
12. Forouhi, A. R. and Bloomer, I., Phys. Rev. B 34, 7018 (1986).Google Scholar
13. Fontcuberta i Morral, A., Roca i Cabarrocas, P., Clerc, C., Phys. Rev. B 69, 125307 (2004).Google Scholar
14. Aguas, H., Silva, V., Fortunato, E., Lebib, S., Roca, P., Cabarrocas, I., Ferreira, I., Guimaraes, L., Martins, R., Jpn. J. Appl. Phys. 42, 4935 (2003).Google Scholar
15. Postava, K., Aoyama, M., Yamaguchi, T., and Oda, H., Appl. Surf. Sci. 175-176, 276 (2001).Google Scholar
16. Joseph, J. and Gagnarie, A., Thin Solid Films 103, 257 (1983).Google Scholar
17. Von Blanckenhagen, B., Tonova, D., and Ullamann, J., Appl. Opt. 41, 3137 (2002).Google Scholar
18. James, N. et al. Thin Solid Films 516, 7979 (2008).Google Scholar
19. Tauc, J., Grigorovici, R., Vancu, A., Phys. Status Solidi 15, 627 (1966).Google Scholar
20. Cody, G.D., Brooks, B.G., Abeles, B., Sol. Energ. Mater. 8, 231 (1982).Google Scholar