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Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices

Published online by Cambridge University Press:  10 February 2011

L. Tsybeskov ,
G. F. Grom ,
R. Krishnan ,
P. M. Fauchet ,
J. P. McCaffrey ,
J.-M. Baribeau ,
G. I. Sproule ,
D. J. Lockwood ,
V. Timoshenko  and
J. Diener
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L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, USA
G. F. Grom
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, USA
R. Krishnan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, USA
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, USA
J. P. McCaffrey
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
G. I. Sproule
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
V. Timoshenko
Affiliation:
Technical University of Munich, Physics department E16, Garching, Germany
J. Diener
Affiliation:
Technical University of Munich, Physics department E16, Garching, Germany
H. Heckler
Affiliation:
Technical University of Munich, Physics department E16, Garching, Germany
D. Kovalev
Affiliation:
Technical University of Munich, Physics department E16, Garching, Germany
F. Koch
Affiliation:
Technical University of Munich, Physics department E16, Garching, Germany
T. N. Blanton
Affiliation:
Kodak Company, Rochester, NY, USA
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Abstract

We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5 % Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4Å are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 173
Copyright
Copyright © Materials Research Society 2000

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