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Optical and Compositional Properties of a-C:H and BN Films

Published online by Cambridge University Press:  28 February 2011

John J. Pouch ,
Samuel A. Alterovitz  and
Joseph D. Warner
John J. Pouch
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Samuel A. Alterovitz
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Joseph D. Warner
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
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Abstract

The amorphous dielectrics a-C:H and BN were deposited on III–V semiconductors.Optical band gaps as high as 3 eV were measured for a-C:H generated by C4 H10 plasmas; a comparison was made with bad gaps obtained from films prepared by CH4 glow discharges.The ion beam deposited BN films exhibited amorphous behavior with band gaps on the order of 5 eV.

Film compositions were studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).The optical properties were characterized by ellipsometry, UV/VIS absorptiofr, and IR reflection and transmission.Etching rates of a-C:H subjected to O2 discharges were determined.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 211
Copyright
Copyright © Materials Research Society 1986

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