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Optical Activation of Ion Implanted Rare-Earths

Published online by Cambridge University Press:  21 February 2011

P.N. Favennec ,
H. L'haridon ,
D. Moutonnet ,
M. Salvi  and
M. Gauneau
P.N. Favennec
Affiliation:
France Telecom, CNET, DIR/SAS, B.P. 40, F-22301 LANNION
H. L'haridon
Affiliation:
France Telecom, CNET, LAB/OCM, B.P. 40, F-22301 LANNION
D. Moutonnet
Affiliation:
France Telecom, CNET, LAB/OCM, B.P. 40, F-22301 LANNION
M. Salvi
Affiliation:
France Telecom, CNET, LAB/OCM, B.P. 40, F-22301 LANNION
M. Gauneau
Affiliation:
France Telecom, CNET, LAB/OCM, B.P. 40, F-22301 LANNION
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Abstract

A review of the main results concerning the ion implantation of the rare-earth elements is given.

To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 181
Copyright
Copyright © Materials Research Society 1993

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References

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