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Optical Absorptions and EL2-Like Defects in Low Temperature Grown Molecular-Beam-Epitaxial GaAs

Published online by Cambridge University Press:  26 February 2011

S. K. So ,
M. H. Chan  and
K. T. Chan
S. K. So
Affiliation:
Department of Physics, Hong Kong Baptist University, 224 Waterloo Road, Kowloon, Hong Kong
M. H. Chan
Affiliation:
Department of Physics, Hong Kong Baptist University, 224 Waterloo Road, Kowloon, Hong Kong
K. T. Chan
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong
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Abstract:

The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580 °C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm−3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 219
Copyright
Copyright © Materials Research Society 1995

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