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Optical Absorption in Co-Deposited Mixed-Phase Hydrogenated Amorphous/Nanocrystalline Silicon Thin Films

Published online by Cambridge University Press:  01 February 2011

Lee Wienkes
Affiliation:
[email protected], University of Minnesota, Physics, Minneapolis, Minnesota, United States
Aaron Besaw
Affiliation:
[email protected], University of Minnesota, Physics, Minneapolis, Minnesota, United States
Curtis Anderson
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, Minneapolis, Minnesota, United States
David Bobela
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Paul Stradins
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Uwe Kortshagen
Affiliation:
[email protected], University of Minnesota, Mechanical Engineering, Minneapolis, Minnesota, United States
James Kakalios
Affiliation:
[email protected], University of Minnesota, Physics, Minneapolis, Minnesota, United States
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Abstract

The conductivity of amorphous/nanocrystalline hydrogenated silicon thin films (a/nc-Si:H) deposited in a dual chamber co-deposition system exhibits a non-monotonic dependence on the nanocrystal concentration. Optical absorption measurements derived from the constant photocurrent method (CPM) and preliminary electron spin resonance (ESR) data for similarly prepared materials are reported. The optical absorption spectra, in particular the subgap absorption, are found to be independent of nanocrystalline density for relatively small crystal fractions (< 4%). For films with a higher crystalline content, the absorption spectra indicate broader Urbach slopes and higher midgap absorption. The ESR spectra show an approximately constant defect density across all of the films. These data are interpreted in terms of a model involving electron donation from the nanocrystals into the amorphous material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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