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On The Origin of The Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown On InP Substrates.

Published online by Cambridge University Press:  15 February 2011

F. PeirÓ ,
A. Cornet ,
P. Roura  and
J.R. Morante
F. PeirÓ
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Ada. Diagonal 645-647. 08028 Barcelona, Spain
A. Cornet
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Ada. Diagonal 645-647. 08028 Barcelona, Spain
P. Roura
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Ada. Diagonal 645-647. 08028 Barcelona, Spain
J.R. Morante
Affiliation:
EME, Enginyeria i Materials Electrònics. Dept. Física Aplicada i Electrònica. Universitat de Barcelona. Ada. Diagonal 645-647. 08028 Barcelona, Spain
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Abstract

In this paper we summarise the TEM observations carried out on InxGa1-xAs strained layers grown by Molecular Beam Epitaxy on (100) InP substrates (xIn in the range 54.3%-62.5%). The evolution of the modulation wavelength with the epilayer thickness, growth temperature (Tg) and layer-substrate strain is reported. The quantification of the amplitude of the composition variation linked to the coarse contrast modulation from the theoretical fitting of the Optical Absorption spectra is also presented. In view of these results we suggest a model for the appearance of the contrast modulations in ternary and quaternary III-V alloys according to the different structural configurations driven by the alloy stabilisation inside the miscibility gap due to the minimization of the free Gibbs energy as Tg increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 159
Copyright
Copyright © Materials Research Society 1995

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References

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