Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-24T10:33:09.205Z Has data issue: false hasContentIssue false

On determination of properties of ultrathin and very thin silicon oxide layers by FTIR and X - ray reflectivity

Published online by Cambridge University Press:  01 February 2011

Martin Kopani
Affiliation:
[email protected], Comenius University, School of medicine, Sasinkova 4, Bratislava, 811 08, Slovakia, 00421259357454, 00421259357592
Matej Jergel
Affiliation:
[email protected], Slovak Academy of Science, Institute of Physics, Dubravska cesta 9, Bratislava, 845 11, Slovakia
Hikaru Kobayashi
Affiliation:
[email protected], Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Masao Takahashi
Affiliation:
[email protected], Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Robert Brunner
Affiliation:
[email protected], Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Milan Mikula
Affiliation:
[email protected], Slovak Academy of Science, Institute of Physics, Dubravska cesta 9, Bratislava, 845 11, Slovakia
Kentarou Imamura
Affiliation:
[email protected], Slovak University of Technology, Faculty of Chemical and Food Technology, Department of Grafic Art Technology and Applied Photochemistry, Radlinskeho 9, Bratislava, 812 37, Slovakia
Stanislav Jurecka
Affiliation:
[email protected], Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Organization, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Emil Pincik
Affiliation:
[email protected], University of Zilina, Faculty of Electrical Engineering, Department of Engineering Fundamentals, kpt. J. Nalepku 1390, Liptovsky Mikulas, 031 01, Slovakia
Get access

Abstract

We analyze properties of ultra-thin SiO2 + very thin SiOx double layer structure formed on high-doped n-type Si (100) wafers using FTIR, X-ray reflectivity and AFM methods. The observed absorption band around 1230 cm−1 is attributed to the longitudinal optical mode of SiOx precipitates incorporated in silicon matrix. In particular, the corresponding peak positions indicate that there are precipitates of SiOx with x >1.8. The absorption band around 1070 cm−1 is attributed to the Si–O–Si stretching bond. This position is characteristic for stoichiometric SiO2. From the results it can be concluded that differently shaped particles co-exist in the samples. This assumption is supported by the oxide density measurements performed by FTIR and X-ray reflectivity. We determined density of oxide layers, roughness of corresponding interfaces, and surface roughness by the X-ray reflectivity. The obtained values were compared with those determined by FTIR and AFM. Additionally, we present the results of multifractal analysis on a complete set of six samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Babayan, S.E. Jeong, J.Y. Tu, V.J. Park, J. Selwyn, G.S. and Hicks, R.F. Plasma Source Sci. Technol. 7, 286288 (1998).Google Scholar
2. Imai, S. Takahashi, M. Matsuba Asuha, K., Ishikawa, Y. and Kobayashi, H. Acta Phys. Slovaca 55, 305313 (2005).Google Scholar
3. Underwood, J.H. and Barbee, T.W. AIP Conf. Proc. 75, 170 (1981).Google Scholar
4. Nevot, L. and Croce, P. Rev. Phys. Apl. 15, 761 (1980)Google Scholar
5. Borghesi, A. Piaggi, A. Sassella, A. Stella, A. and Pivac, B. Phys. Rev. B 46, 41234127 (1992).Google Scholar
6. Pivac, B. Borghesi, A. Geddo, M. Sassella, A. and Stella, A. Appl. Sur. Sci. 63, 245248 (1993).Google Scholar
7. Yu, R.S. Ito, K. Hirata, K. Sato, K. Zheng, W. and Kobayashi, Y. Chem. Phys. Lett. 379, 359363 (2003).Google Scholar
8. Fitch, J.T. Kobeda, E. Lucovsky, G. and Irene, E.A. J. Vac. Sci. Technol. B 7, 153162 (1989)Google Scholar
9. Stoudek, R. and Humlicek, J. Phys. B. 376-377, 150153 (2006).Google Scholar
10. Banerjee, A. and Lucovsky, G. MRS Symp. Proc. 420, 405 (1995).Google Scholar
11. Rochet, F. Dufour, G. Roulet, H. Pelloie, B. Perrière, J. Fogarassy, E. Slaoui, A. Froment, M. Phys. Rev. B 37 64786477 (1988).Google Scholar
12. Mandelbrot, B.B. The Fractal of Nature, Freeman, New York 1982.Google Scholar
13. Gouyet, J.F. Physics and Fractal Structures, Springer-Verlag, New York 1996.Google Scholar
14. Chabra, A. Jensen, R.V. Phys. Rev. Lett. 62 13271330 (1989).Google Scholar