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Odesr Studies of a-Si:H with Subgap Excitation

Published online by Cambridge University Press:  01 January 1993

D. Mao ,
S.Q. Gu  and
P.C. Taylor
D. Mao
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
S.Q. Gu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

We report studies of the spin-dependent recombination processes in device-quality a-Si:H by optically detected ESR (ODESR) with the excitation energy (Ex) varied from above-gap to sub-gap. The photoluminescence (PL) transients induced by the chopping of the microwaves are recorded as functions of the magnetic field to yield the lineshapes. This scheme, to some extent, circumvents the problem of interferences between "enhancing" and "quenching" signals encountered in conventional phase-sensitive detection. The PL below 1.1 eV is monitored. For Ex above 1.5 eV, we find all the lineshapes are similar: a broad, slightly asymmetric enhancing line peaking at g = 2.008 and an asymmetric quenching line peaking at g = 2.005. Lineshape changes are noticeable for Ex below 1.5 eV. The relative signal intensity AI/I changes dramatically with varying excitation energy. Light-soaking of the sample induces an additional enhancing signal which peaks at g = 2.006.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

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References

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