Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-27T15:34:51.254Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of the Stark Effect in GaAs/AlGaAs Coupled Quantum Wells by Electroluminescence and Circularly Polarized Photoluminescence Excitation

Published online by Cambridge University Press:  21 February 2011

Y. Kato ,
Y. Takahashi ,
S. Fukatsu ,
Y. Shiraki  and
R. Ito
Y. Kato
Affiliation:
IBM Tokyo Research Laboratory, 1623-14 Shimo-tsuruma, Yamato-shi, Kanagawa, Japan 242
Y. Takahashi
Affiliation:
IBM Tokyo Research Laboratory, 1623-14 Shimo-tsuruma, Yamato-shi, Kanagawa, Japan 242
S. Fukatsu
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, Japan 153
Y. Shiraki
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, Japan 153
R. Ito
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113
Get access

Abstract

The quantum-confined Stark effect (QCSE) has been studied in electroluminescence (EL) spectra by using GaAs/AlQ 3GaQ 7As symmetric coupled double-quantum-well (CDQW) structures under a "forward" electric field. The Stark shift for the transition between the ground electron state and heavy-hole state was successfully observed, and was found to be symmetrical with regard to the flat-band bias for EL and photoluminescence (PL), in which the electric field was applied in the forward and reverse directions, respectively. Circularly polarized photoluminescence excitation (CPPLE) spectroscopy was also employed to clarify the origins of optical transitions related to either heavy-hole or light-hole resonance. Each transition between electrons and light- and heavy-holes in the CDQWs was clearly identified by PL and by polarization of CPPLE spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 501
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mendez, E.E., Bastard, G., Chang, L.L., and Esaki, L., Phys. Rev. B, 26, 7101 (1982).Google Scholar
2 Miller, DAB., Chemla, D.S., Damen, T.C., Gossard, AC., Wilegmann, W., Wood, T.H., and Burrus, C.A., Phys. Rev. Lett. 53, 2173 (1984) : Phys. Rev. B, 32, 1043 (1985).Google Scholar
3 Miller, DAB., Weiner, J. S., and Chemla, D.S., IEEE J. Quantum Electron, QE–22, 1816 (1987).Google Scholar
4 Chen, Y.J., Koteles, ES., Elman, B.S., and Armiento, C.A., Phys. Rev. B, 36, 4562 (1987).Google Scholar
5 Le, H.Q., Zayhowski, J.J., and Goodhue, W.D., Appl. Phys. Lett. 50, 1518 (1987).Google Scholar
6 Andrews, S.R., Murray, CM., Davies, R.A., and Kerr, T.M., Phys. Rev. B, 37, 8198 (1988).Google Scholar
7 Onose, H., Yoshimura, H., and Sakaki, H., Appl. Phys. Lett. 54, 2221 (1989).Google Scholar
8 Miller, R.C. and Kleinman, DA., J. Lumin. 30, 520 (1986).Google Scholar
9 Ota, K., Yaguchi, H., K, Onabe, Ito, R., Takahashi, Y., Muraki, K., and Shiraki, Y., Appl. Phys. Lett. 63, 946 (1993).Google Scholar
10 Molenkamp, L. W., Eppenga, R., G.W.'t, Hooft, Dawson, P., Foxon, C. T., and Moore, K.J., Phys. Rev. B, 38, 4314 (1988).Google Scholar