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Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors

Published online by Cambridge University Press:  30 August 2011

Man-Tieh Chen  and
Yuh-Renn Wu
Man-Tieh Chen
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
Yuh-Renn Wu*
Affiliation:
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, 10617.
*
*Corresponding author: [email protected]
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Abstract

This paper addresses scaling issues in graphene nanoribbon transistors (GNRFETs) by using a two-dimensional (2-D) Poisson and drift-diffusion solver with finite element method (FEM). GNRFETs with the back gate control and the channel width down to less than 5nm have been reported to have Ion=Ioff ratio up to 106. Our simulations show an agreement with the published experimental work and show a potential to reach unit current gain cut-off frequency, fT , up to more than 1THz with a satisfying Ion=Ioff ratio at the same time. This makes GNRFETs attractive for high speed logic.

Keywords

simulationcarbonizationnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1344: Symposium Y – Functional Two-Dimensional Layered Materials—From Graphene to Topological Insulators , 2011 , mrss11-1344-y03-23
Copyright
Copyright © Materials Research Society 2011

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References

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