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Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Justin C. Hackley ,
J. Derek Demaree  and
Theodosia Gougousi
Justin C. Hackley
Affiliation:
[email protected], UMBC, Physics, 1000 Hilltop Circle, Baltimore, MD, 21250, United States
J. Derek Demaree
Affiliation:
[email protected], Army Research Laboratory, Weapons & Materials Research Directorate, Aberdeen Proving Ground, Aberdeen, MD, 21005-5069, United States
Theodosia Gougousi
Affiliation:
[email protected], UMBC, Physics, 1000 Hilltop Circle, Baltimore, MD, 21250, United States, 410 4556874, 410 4551072
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Abstract

A hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C.FTIR spectra indicate the films are amorphous as-deposited.Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces.Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS).Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles.We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

Keywords

atomic layer depositionHfnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H03-09
Copyright
Copyright © Materials Research Society 2007

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