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A Novel Process to Form Epitaxial Si Structures With Buried Silicide

Published online by Cambridge University Press:  28 February 2011

YU. N. Erokhin ,
R. Grotzschel ,
S. R. Oktyabrski ,
S. Roorda ,
W. Sinke  and
A. F. Vjatkin
YU. N. Erokhin
Affiliation:
Institute of Microelectronics Technology USSR Academy of Sciences, Chernogolovka, 142432, Moscow rgn, USSR
R. Grotzschel
Affiliation:
Central Institute Of Nuclear Physics, Rossendorf, Dresden, Federal Republic of, Germany
S. R. Oktyabrski
Affiliation:
P.N. Lebedev Physical Institute, 53, Leninsky prosp., Moscow, 117924, USSR
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, Amsterdam 1098SJ, The Netherlands
W. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, Amsterdam 1098SJ, The Netherlands
A. F. Vjatkin
Affiliation:
Institute of Microelectronics Technology USSR Academy of Sciences, Chernogolovka, 142432, Moscow rgn, USSR
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Abstract

The interaction during low temperature thermal annealing of metal atoms from a Ni film evaporated on top of Si structures with a buried amorphous layer formed by ion implantation has been investigated. Rutherford Backscattering Spectrometry (RBS)/channeling, cross-sectional transmission electron microscopy (XTEM) and X-ray microanalysis were used to determine structures and compositions. It is shown that the combination of such silicon properties as the increased rate of silicidation reaction for amorphous silicon with respect to the crystalline one in combination with high metal atom diffusivity leads to formation of buried epitaxial Ni silicide islands at the interface between the amorphous and the top crystalline silicon layers. During thermal annealing at temperatures as low as 350° C, these islands move through the a-Si layer leaving behind epitaxially recrystallized Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 313
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M. and Jacobson, D. C., Thin Solid Films, 93, 77 (1982).CrossRefGoogle Scholar
2. Tung, R. T. and Schrey, F., Mat. Res. Soc. Symp. Proc. 122, p. 559 (Mat. Res. Soc., Pittsburg, PA 1988).Google Scholar
3. Fan, J. C. C. and Anderson, H., J. Appl. Phys. 52, 4003 (1981).CrossRefGoogle Scholar
4. Sinke, W. C., Roorda, S. and Saris, F. W., J. Mater. Res. 3, 1201 (1988).CrossRefGoogle Scholar
5. Xiao, Z. G., Honeycutt, J. W. and Rozgonyi, G. A. in Evolution of Thin-Film and Surface Microstructure, edited by Thompson, C. V., Tsao, J. Y. and Srolovitz, D. J. (Mat. Res. Soc. Symp. Proc. 202, Pittsburg, PA 1991), pp. 259–264.Google Scholar
6. Quick Reference Manual for Silicon Integrated Circuit Technology, edited by Beadle, W. E., Tsai, J. C. C. and Plummer, R. D., (John Wiley & Sons, Inc., New York), 1985.Google Scholar
7. Chen, L. J., Wagner, J. W., Tu, K. N. and Sheng, T. T., Thin Solid Films, 93, 91 (1982).CrossRefGoogle Scholar
8. Roorda, S., Doom, S., Sinke, W. C., Scholte, P. M. L. O. and van Loenen, E., Phys. Rev. Lett. 62, 1880 (1989).CrossRefGoogle Scholar
9. Radiation Technology of Semiconductors, edited by Smirnov, L. S.. Nauka Publ. Novosibirsk. 1980. 296 p. (in Russian).Google Scholar