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A Novel Preparation Technique Termed “Chemical Annealing” to make a Rigid and Stable Si-Network

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Jun-Ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Jun-Ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
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Abstract

A novel preparation technique termed “Chemical Annealing (CA)” was developed with aim of making a stable and rigid structure of Si-network. The a-Si:H films were made by the alternate deposition of several tens angstrom thick a-Si:H and the treatment with atomic hydrogen or excited novel gases such as Ar* and He*. Hydrogen contents (CH) and optical gap (Eg) in the film prepared by this tecnique were able to reduced by CH of 1.5at%, and Eg of 1.5eV, respectively at substrate temperature:300C. All of them exhibited high photoconductivities in the level of 10-5 10-4 S/cm under illumination of 100mW/cm2. In the films with CH of 3at% or less, in particular, marked improvement was confirmed in the stability after light soaking. In addition, the time-of-flight measurement revealed a non-dispersive transport and a significant enhancement in the drift mobility of holes up to 0.2cmm2/Vs at room temperature in the film with CH : 5at% and Eg:1.65eV prepared at 300C. Advantages of the CA process are summarized together with the discussion of role of atomic hydrogen, excited novel gases such as Ar* and He* in the growing surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 643
Copyright
Copyright © Materials Research Society 1991

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References

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