Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-27T15:34:52.031Z Has data issue: false hasContentIssue false
  • English
  • Français

A novel, nanocrystal (nc) based non-volatile memory device

Published online by Cambridge University Press:  17 March 2011

Jan W. De Blauwe ,
Marty L. Green ,
Tom W. Sorsch ,
Garry R. Weber ,
Jeff D. Bude ,
Andi Kerber ,
Fred Klemens ,
Young Kim ,
Michele L. Ostraat  and
Richard C. Flagan
...Show all authors
Jan W. De Blauwe
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Marty L. Green
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Tom W. Sorsch
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Garry R. Weber
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Jeff D. Bude
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Andi Kerber
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Fred Klemens
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Young Kim
Affiliation:
Agere Systems, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Michele L. Ostraat
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Richard C. Flagan
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Harry A. Atwater
Affiliation:
California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125, USA
Get access

Abstract

This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F7.5.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

[1] Lai, S. et al. “Design of an E2PROM memory cell less than 100 square microns using 1 micron technology” in IEDM Tech. Dig., p. 468, 1984.Google Scholar
[2] Tiwari, S. et al. “Volatile and non-volatile memories in silicon with nano-crystal storage” in IEDM Tech. Digest, p. 521, 1995.Google Scholar
[3] Yano, K. et al. “Room-temperature single-electron memory” IEEE T-ED, vol. 41, p. 1628, 1994.Google Scholar
[4] Hanafi, H. et al. “Fast and long retention time nano-crystal memory” in IEEE T-ED, vol 43, p. 1553, 1996.Google Scholar
[5] Tiwari, S. et al. “Single charge and confinement effects in nano-crystal memories” APL 69 (9), p. 1232, 1996.Google Scholar
[6] Okada, R. and Iijima, S.. “Oxidation property of silicon small particles” APL 58 (15), p. 1662, 1991.Google Scholar
[7] Saito, K. et al. “Narrow channel MOS memory based on silicon nano-crystals”, IEEE Silicon Nanoelectronics workshop, p. 17, 1998.Google Scholar