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Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Chih-hung Chang ,
Billy Stanbery ,
Augusto Morrone ,
Albert Davydov  and
Tim Anderson
Chih-hung Chang
Affiliation:
Department of Chemical EngineeringUniversity of Florida, Gainesville FL 32611
Billy Stanbery
Affiliation:
Department of Chemical EngineeringUniversity of Florida, Gainesville FL 32611
Augusto Morrone
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville FL 32611
Albert Davydov
Affiliation:
Department of Chemical EngineeringUniversity of Florida, Gainesville FL 32611
Tim Anderson
Affiliation:
Department of Chemical EngineeringUniversity of Florida, Gainesville FL 32611
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Abstract

CuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 163
Copyright
Copyright © Materials Research Society 1998

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