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A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

Published online by Cambridge University Press:  10 February 2011

C. M. Park ,
J.-H. Jeon ,
J.-S. Yoo  and
M.-K. Han
C. M. Park
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151–742, Korea
J.-H. Jeon
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151–742, Korea
J.-S. Yoo
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151–742, Korea
M.-K. Han
Affiliation:
School of Electrical Engineering., Seoul National Univ., Seoul, 151–742, Korea
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Abstarct:

We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.

The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 167
Copyright
Copyright © Materials Research Society 1997

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References

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