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A Novel Infrared Sige/Si Heterojunction Detector with an Ultrathin Phosphorus Barrier Grown by Atomic Layer Deposition

Published online by Cambridge University Press:  10 February 2011

R. Banisch ,
B. Tilack ,
M. Pierschel ,
K. Pressel ,
R. Barth ,
D. Krüger  and
G. Ritter
R. Banisch
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
B. Tilack
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
M. Pierschel
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
K. Pressel
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
R. Barth
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
D. Krüger
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
G. Ritter
Affiliation:
Institute for Semiconductor Physics, P.O. Box 409, D-15204 Frankfurt(Oder), Germany, [email protected]
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Abstract

In strained Sia−xGex heterojunction internal photoemission (HIP) photodiodes the spectral response can be tailored over a wide wavelength range by varying the Ge content. In this paper heavily in situ boron doped SiGe layers with 30% Ge were grown by low pressure rapid thermal chemical vapour deposition (LP(RT)CVD). The detectors exhibit a cut-off wavelength of 8.5 μm. A delta-like P peak, incorporated by atomic layer deposition technique, shifts the cut-off to shorter wavelengths. This shift is related to an increase of the barrier height at the SiGe/Si interface caused by the narrow n+-doped layer in agreement with device simulation. In this way the trade off between critical film thickness for high Ge content film growth and absorption depth for proper detector response can be overcome.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 213
Copyright
Copyright © Materials Research Society 1997

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References

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