Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-24T19:55:59.304Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Ceria-Polymer Composites for Reduced Defects during Oxide CMP

Published online by Cambridge University Press:  31 January 2011

Cecil Coutinho ,
Subramanya Mudhivarthi ,
Ashok Kumar  and
Vinay Gupta
Cecil Coutinho
Affiliation:
[email protected], University of South Florida, Chemical Engineering, Tampa, Florida, United States
Subramanya Mudhivarthi
Affiliation:
[email protected], University of South Florida, Mechanical Engineering, Tampa, Florida, United States
Ashok Kumar
Affiliation:
[email protected], University of South Florida, Mechanical Engineering, Tampa, Florida, United States
Vinay Gupta
Affiliation:
[email protected], University of South Florida, Chemical Engineering, Tampa, Florida, United States
Get access

Abstract

To meet the stringent requirements of device integration and manufacture, surface defects and mechanical stresses that arise during chemical mechanic planarization (CMP) must be reduced. Towards this end, we have synthesized multiple hybrid and composite particles on micron length scales consisting of siloxane co-polymers functionalized with inorganic nanoparticles. These particles can be easily tailored during synthesis, leading to softer or harder abrasion when desired. Upon using these particles for the planarization of silicon oxide wafers, we obtain smooth surfaces with reduced scratches and minimal particle deposition, which is an improvement from conventional abrasive materials like pure silica, ceria and alumina nanoparticle slurries. Tribological characteristics during polishing were examined using a bench top CMP tester to evaluate the in situ co-efficient of friction. Characterization of the hybrid and composite particles has been done using infrared spectroscopy, dynamic light scattering, and electron microscopy. Surface roughness of the wafers was examined using atomic force and optical microscopy while removal rate measurements were conducted using ellipsometry at multiple angles.

Keywords

slurrypolymerizationCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E06-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Oliver, M. R., Chemical Mechanical Planarization of Semiconductor Materials. (2004).Google Scholar
2 Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials. (1996).Google Scholar
3 Teo, T. Y., Goh, W. L., Lim, V. S. K., Leong, L. S., Tse, T. Y. and Chan, L., Journal of Vacuum Science & Technology 22 (1), 65–69 (2004).Google Scholar
4 Zhang, L., Raghavan, S. and Weling, M., Journal of Vacuum Science & Technology 17 (5), 2248–2255 (1999).Google Scholar
5 Evans, D. R., Materials Research Society Symposium Proceedings 816, 245–256 (2004).Google Scholar
6 Koyama, N., Ashisawa, T. and Yoshida, M., Patent No. JP Patent 2000109814 (2000).Google Scholar
7 Coutinho, C. A., Harrinauth, R. K. and Gupta, V. K., Colloids and Surfaces, A: Physicochemical and Engineering Aspects 318 (1-3), 111–121 (2008).Google Scholar
8 Gupta, V. K., Jain, R., Mittal, A., Mathur, M. and Sikarwar, S., Journal of colloid and interface science 309 (2), 464–469 (2007).Google Scholar
9 Subrahmanya, R. M., Cecil, C., Ashok, K. and Vinay, G., ECS Transactions 3 (41), 9–19 (2007).Google Scholar
10 Lee, S. A., Choo, K. H., Lee, C. H., Lee, H. I., Hyeon, T., Choi, W. and Kwon, H. H., Industrial & Engineering Chemistry Research 40 (7), 1712–1719 (2001).Google Scholar
11 Tateyama, Y., Hirano, T., Ono, T., Miyashita, N. and Yoda, T., Proceedings -Electrochemical Society 26, 297–305 (2001).Google Scholar
12 Coutinho, C. A. and Gupta, V. K., Journal of Colloid and Interface Science 315 (1), 116–122 (2007).Google Scholar
13 Chen, J. J., Patent No. TW Patent: 9988115709 (2001).Google Scholar
14 Chiou, H.-W. and Chen, L.-J., IEEE International Interconnect Technology Conference Proceedings, 199–201 (1998).Google Scholar
15 Jang, S.-m., Chen, Y.-h. and Yu, C.-h., Application:US Patent: 97810390 (1997).Google Scholar