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Nonvolatile Two-Terminal Molecular Memory

Published online by Cambridge University Press:  01 February 2011

Jason Snodgrass ,
Glen Kennedy ,
Wai-Ning Mei  and
Renat Sabirianov
Jason Snodgrass
Affiliation:
[email protected], University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Glen Kennedy
Affiliation:
[email protected], University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Wai-Ning Mei
Affiliation:
[email protected], University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
Renat Sabirianov
Affiliation:
[email protected], University of Nebraska Omaha, Omaha, NE, 68182-0226, United States
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Abstract

We propose a nonvolatile two-terminal memory with two resistance states based on the molecular tunnel junctions. This tunnel junction is composed of one or few monolayers of polar molecules sandwiched between two electrodes made of materials with different screening length. As a prototype model system we study rare earth endohedral metallofullerene molecule with reversible dipole moment sandwiched by metal and semiconducting electrodes forming a double barrier junction. We use the Thomas-Fermi model to calculate the potential profile across the device. Calculated tunneling conductance through the proposed structure changes by order of magnitude upon the reversal of the dipole orientation (due to the applied voltage). This effect originates from the difference of potential profile seen by tunneling electrons for two opposite dipole orientations.

Keywords

memorymicroelectronicselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O03-07
Copyright
Copyright © Materials Research Society 2007

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References

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