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Nonequilibrium Crystal Growth During Pulsed Laser Annealing*

Published online by Cambridge University Press:  15 February 2011

C. W. White
C. W. White*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

Solidification of the melted region during pulsed laser annealing occurs under conditions that are far from equilibrium at the interface. Studies of laser annealing of ion implanted silicon can be used to provide a wealth of information on nonequilibrium crystal growth phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 109
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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