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Non-Destructive Characterization of Porous Silicon Using X-Ray Reflectivity

Published online by Cambridge University Press:  28 February 2011

E. Chason ,
T.R. Guilinger ,
M.J. Kelly ,
T.J. Headley  and
A.J. Howard
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
T.R. Guilinger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M.J. Kelly
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
T.J. Headley
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A.J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Understanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 nm) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 nm indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 321
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Tsao, S.S., IEEE Circuits Devices CD–3, 3 (1987).Google Scholar
2 Steiner, P., Richter, A. and Lang, W., J. Micromech. Microeng. 3, 32 (1993).Google Scholar
3 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
4 Guilinger, T.R., Kelly, M.J. and Stevenson, J.O., Proc. of the First Int'l. Symposium on Electrochemical Microfabrication, edited by Datta, M., Sheppard, K. and Snyder, D., The Electrochemical Society, vol. 92–3, 1992.Google Scholar
5 Als-Nielsen, J. in Structure and Dynamics of Surfaces, edited by Schommers, W. and von Blanckenhagen, P. (Springer, Berlin, 1986), Chap. 5, p. 181.Google Scholar
6 Underwood, J.H. and Barbee, T.W., Appl. Opt. 20, 3027 (1981).Google Scholar
7 Chason, E., Mayer, T.M., Payne, A. and Wu, D.T., Appl. Phys. Lett. 60, 2353 (1992).; E. Chason and D.T. Warwick, Mat. Res. Symp. Proc. Vol 208, 351 (1991).Google Scholar
8 Parratt, L.G., Phys. Rev. 95, 359 (1954).Google Scholar
9 Hu, S.M. and Kerr, D.R., J. Electrochem. Soc. 114, 414 (1967).Google Scholar
10 Guilinger, T.R. and Kelly, M.J., unpublished result.Google Scholar
11 Smith, R.L. and Collins, S.D., J. Appl. Phys. 71, R1 (1992).Google Scholar