Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-02T20:55:17.027Z Has data issue: false hasContentIssue false
  • English
  • Français

Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides

Published online by Cambridge University Press:  10 February 2011

T. J. Schmidt ,
J. J. Song ,
S. Keller ,
U. K. Mishra ,
S. P. DenBaars  and
Wei Yang
T. J. Schmidt
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics Oklahoma State University, Stillwater, Oklahoma 74078
S. Keller
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
U. K. Mishra
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
S. P. DenBaars
Affiliation:
Electrical and Computer Engineering and Materials Departments University of California, Santa Barbara, California 93106
Wei Yang
Affiliation:
Honeywell Technology Center, 12001 State Highway 55, Plymouth, Minnesota 55441
Get access

Abstract

We report the results of nondegenerate optical pump-probe absorption experiments performed on GaN and InGaN thin films and quantum wells under the conditions of strong optical band to band excitation. The evolution of the band edge in these materials was monitored as the number of photoexcited free carriers was increased beyond that required to achieve population inversion and observe stimulated emission. The band edge of InGaN is shown to exhibit markedly different high excitation behavior than that of GaN, explaining in part the reduction in stimulated emission threshold that typically accompanies the incorporation of indium into GaN to form InGaN. A comparison of the band edge absorption changes observed in pump-probe experiments to the gain spectra measured in variable-stripe gain experiments is also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 433
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mohammad, S.N. and Morkoc, H., Prog. Quant. Electr. 20, 361(1996), and references therein.10.1016/S0079-6727(96)00002-XGoogle Scholar
2. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys., Part 1 34, L1332 (1995). S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 868 (1997). S. Nakamura, MRS Internet J. Nitride Semicond. Res. 4S1, G1. 1 (1999).10.1143/JJAP.34.L1332Google Scholar
3. Fischer, A.J., Shan, W., Park, G.H., Song, J.J., Kim, D.S., Yee, D.S., Horning, R., and Goldenberg, B., Phys. Rev. B 56 1077(1997).10.1103/PhysRevB.56.1077Google Scholar
4. Zimmermann, R., Hofmann, M., Weber, D., Mobius, J., Euteneuer, A., Ruhle, W.W., Gobel, E.O., Meyer, B.K., Amano, H., and Akasaki, , MRS Internet. J. Nitride Semicond. Res. 2, Article 24 (1997).10.1557/S1092578300001502Google Scholar
5. Sun, C.K., Vallee, F., Keller, S., Bowers, J.E., and DenBaars, S.P., Appl. Phys. Lett. 70, 2004(1997).10.1063/1.118803Google Scholar
6. Taheri, B., Hays, J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 68, 587(1996).10.1063/1.116476Google Scholar
7. Haag, H., Gilliot, P., Ohlmann, D., Levy, R., Briot, O., Aulombard, R.L., MRS Internet J. Nitride Semicond. Res. 2, Article 21 (1997).10.1557/S1092578300001472Google Scholar
8. Haag, H., Gilliot, P., Levy, R., Honerlage, B., Briot, O., Ruffenach-Clur, S., and Aulombard, R.L., Appl. Phys. Lett. 74, 1436(1999).10.1063/1.123574Google Scholar
9. Schmidt, T.J., Song, J.J., Chang, Y.C., Horning, R., and Goldenberg, B., Appl. Phys. Lett. 72, 1504(1998).10.1063/1.121040Google Scholar
10. Schmidt, T.J., Chang, Y.C., and Song, J.J., SPIE Conf. Proceedings Series 3419, 61(1998).Google Scholar
11. Fischer, A.J., Little, B.D., Schmidt, T.J., Song, J.J., Horning, R., and Goldenberg, B., SPIE Conf. Proceedings Series 3624–25 (1999).Google Scholar
12. Haag, H., Gilliot, P., Levy, R., Honerlage, B., Briot, O., Ruffenach-Clur, S., and Aulombard, R.L., Phys. Rev. B 59, 2254(1999).10.1103/PhysRevB.59.2254Google Scholar
13. Schmidt, Theodore J., Ph. D. thesis, Oklahoma State University, 1998.Google Scholar
14. Schmidt, T.J., Cho, Y.H., Gainer, G.H., Song, J.J., Mishra, U.K., and DenBaars, S.P., Appl. Phys. Lett. 73, 1892(1998).10.1063/1.122317Google Scholar
15. Schmidt, T.J., Cho, Y.H., Bidnyk, S., Song, J.J., Keller, S., Mishra, U.K., and DenBaars, S.P., SPIE Conf. Proceedings Series 3625–7 (1999).Google Scholar
16. Keller, B.P., Keller, S., Kapolnek, D., Jiang, W.N., Wu, X.F., Masui, H., Wu, X.H., Heying, B., Speck, J.S., Mishra, U.K., and DenBaars, S.P., J. Electron. Mater. 24, 1707(1995). S. Keller, A.C. Abare, M.S. Minski, X.H. Wu, M.P. Mack, J.S. Speck, B. Hu, L.A. Coldren, U.K. Mishra, and S.P. DenBaars, Materials Science Forum, 264–268, 1157 (1998).10.1007/BF02676837Google Scholar
17. Takeuchi, T., Takeuchi, H., Sota, S., Sakai, H., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys. 36, L177 (1997). M.D. McCluskey, C.G. Van deWalle, C.P. Master, L.T. Romano, and N.M. Johnson, Appl. Phys. Lett. 72, 2725 (1998).10.1143/JJAP.36.L177Google Scholar
18. Fischer, A.J., Shan, W., Song, J.J., Chang, Y.C., Homing, R., and Goldenberg, B., Appl. Phys. Lett. 71, 1 (1997).10.1063/1.119761Google Scholar
19. Klingshim, C. and Haug, H., Phys. Rep. 70, 315 (1981), and references therein.10.1016/0370-1573(81)90190-3Google Scholar
20. Schmidt, T.J., Cho, Y.H., Song, J.J., and Yang, Wei, Appl. Phys. Lett. 74, 245(1999).10.1063/1.123269Google Scholar
21. Shaklee, K.L. and Leheny, R.F., Appl. Phys. Lett. 18, 475(1971).10.1063/1.1653501Google Scholar
22. Schmidt, T.J., Bidnyk, S., Cho, Y.H., Fischer, A.J., Song, J.J., Keller, S., Mishra, U.K., and DenBaars, S.P., Appl. Phys. Lett. 73, 3689(1998).10.1063/1.122864Google Scholar
23. Schmidt, T.J., Bidnyk, S., Cho, Y.H., Fischer, A.J., Song, J.J., Keller, S., Mishra, U.K., and DenBaars, S.P., MRS Intemet J. Nitride Semicond. Res. 4S1, G6.54 (1999).10.1557/S1092578300003379Google Scholar
24. Breitkopf, T., Kalt, H., Klingshirn, C., and Reznitsky, A., J. Opt. Soc. Am. B. 13, 1251(1996).10.1364/JOSAB.13.001251Google Scholar