Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T23:53:29.126Z Has data issue: false hasContentIssue false
  • English
  • Français

Non Destructive Profile Measurements of Annealed Shallow Implants

Published online by Cambridge University Press:  10 February 2011

Peter Borden ,
Regina Niimeiier  and
Karen Lingel
Peter Borden
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025.
Regina Niimeiier
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025.
Karen Lingel
Affiliation:
Boxer Cross Inc., 978 Hamilton Court, Menlo Park, CA 94025.
Get access

Abstract

Controlling the profile of shallow doped layers is critical for obtaining desired performance from deep sub-micron devices. An especially difficult challenge is measuring depth uniformity of the activated implant over the full area of a wafer.

This paper demonstrates the capabilities of a new rapid, non-contact optical technique for measuring active doping depth of shallow implants. Employing a 2 Pim spot size, it provides a measurement of fine-scale spatial uniformity in dimensions approaching those of individual devices. By measuring multiple sites, it can rapidly characterize uniformity over large areas and edge-to-edge, without an edge exclusion zone.

Data will be presented showing performance on layers varying in depth from 200 to 1200 Å. Edge-to-edge diameter scans on 8” wafers with le15, B11 implants at energies in the range of 200 to 2,000 eV and various RTA temperatures show radially symmetric uniformity patterns of depth and edge effects in the outermost centimeter. Measurements are validated based on correlation to spreading resistance profiles for a number of samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 239
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ishida, E. and Felch, S.B., J. Vac. Sci. Technol. B 14 (1), 397 (1996).Google Scholar
2. Pawlik, M., presented at the 4 th Ultra-shallow junction meeting, 1998.Google Scholar
3. Semiconductor Assessment Services LTD, High Wycombe, Bucks, UK.Google Scholar