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Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

Published online by Cambridge University Press:  10 February 2011

Laurent Auvray ,
Hervé Dumont ,
Jacques Dazord ,
Yves Monteil  and
Jean Bouix
Laurent Auvray
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Hervé Dumont
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Jacques Dazord
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Yves Monteil
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Jean Bouix
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
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Abstract

The nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 189
Copyright
Copyright © Materials Research Society 2000

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References

1 Saito, H.. Makimoto, T.. Kobayashi, N.. J.Crystal Growth 195, 416 (1998).10.1016/S0022-0248(98)00666-6Google Scholar
2 Ougazzaden, A., Bellego, Y. Le, Rao, E.V. K., Juhel, M.. Leprince, L.. Patriarche, G., Appl. Phys. Leti. 70, 2862 (1997).Google Scholar
3 Höhnsdorf, F., Koch, J., Agert, C.. Stolz, W., J. Crystal Growth 195. 391 (1998).10.1016/S0022-0248(98)00651-4Google Scholar
4 Friedman, D.J.. Norman, A.G.. Geisz, J.F.. Kurtz, S.R., J. Crstal Growth 208, 11 (2000).10.1016/S0022-0248(99)00523-0Google Scholar
5 Saito, H., Makimoto, T.. Kobayashi, N., J. Crystal Growth 170. 372 (1997).10.1016/S0022-0248(96)00523-4Google Scholar
6 Friedman, D.J., Norman, A.G., Geisz, J.F.. Kurtz, S.R.. J Crystal Growth 195, 438 (2000).10.1016/S0022-0248(98)00562-4Google Scholar
7 Moto, A., Tanaka, S., Ikoma, N., Tanabe, T., Takagishi, S., Takahashi, M.. Katsuyama, T.. Jpn. J. Appl. Phys. 38, 1015 (1999).10.1143/JJAP.38.1015Google Scholar
8 Sun, Y-M, Sloan, D.W., Mc Ellistrem, M.. Schwaner, A.L.. White, J.M.. J. Vac. Sci. Technol. A 13, 1455 (1995).10.1116/1.579686Google Scholar
9 Lee, R.T., Stringfellow, G.B., J. Elect. Mater. 28, 963 (1999).10.1007/s11664-999-0205-9Google Scholar
10 Pristovsek, M.. Trepk, T.. Klein, M., Zettler, J.T.. Richter, W.. J. Appl. Phys. 87, 1245 (2000).10.1063/1.372003Google Scholar
11 Massi, M., Simka, H., Jensen, K., Kuech, T., Potemski, R., J.Crystal Growth 124, 483 (1992).10.1016/0022-0248(92)90504-CGoogle Scholar
12 Kobayashi, N.. J. Crystal Growth 195, 228 (1998).10.1016/S0022-0248(98)00586-7Google Scholar
13 Koleske, D.D.. Wickenden, A.E., Henry, R.L.. DeSisto, W.J.. Gorman, R.J.. J Appl. Phys. 84, 1998 (1998).10.1063/1.368353Google Scholar