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Nitridation of GaAs (001)-2x4 Surface Studied by Auger-Electron Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Igor Aksenov ,
Yoshinobu Nakada  and
Hajime Okumura
Igor Aksenov
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - Angstrom Technology Partnership, Higashi 1- 1-4, Tsukuba, Ibaraki 305, Japan, [email protected]
Yoshinobu Nakada
Affiliation:
Mitsubishi Materials Corporation, 1-297 Kitabukuro, Omiya, Saitama 330, Japan
Hajime Okumura
Affiliation:
Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba, Ibaraki 305, Japan
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Abstract

Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of nitridation of GaAs (001) surface. The analysis of the AES results combined with that of RHEED show that the processes taking place during nitridation greatly differ depending on the nitridation temperature. At low temperatures (≤ 200°C) nitridation is hindered by kinetic restrictions on atomic migration, whereas at high temperatures (≥ 500°C) the process of nitridation takes place simultaneously with the etching of the surface. However, for intermediate temperatures (300°C ∼ 400°C) the results indicate that a complete monolayer of N atoms may be formed on the substrate during the initial stage of nitridation. The post-nitridation annealing of the samples nitrided at the intermediate temperatures results in the formation of a crystalline GaN layer, the line shape of the AES signals from which is identical to that for a GaN reference sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.4
Copyright
Copyright © Materials Research Society 1999

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