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A New Technique for Depth Profiling on a Nanometer Scale

Published online by Cambridge University Press:  15 February 2011

H. Schwenke ,
J. Knoth ,
R. Günther ,
G. Wiener  and
R. Bormann
H. Schwenke
Affiliation:
GKSS Research Center, D-21502 Geesthacht, Germany
J. Knoth
Affiliation:
GKSS Research Center, D-21502 Geesthacht, Germany
R. Günther
Affiliation:
GKSS Research Center, D-21502 Geesthacht, Germany
G. Wiener
Affiliation:
GKSS Research Center, D-21502 Geesthacht, Germany
R. Bormann
Affiliation:
GKSS Research Center, D-21502 Geesthacht, Germany
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Abstract

A new technique is presented for the determination of concentration depth profiles. Surface atoms are sputtered by an ion beam and deposited on a clean silicon wafer. The wafer is rotated behind a slit in step with the sputtering progress. In this way the depth profile of the sample is transferred into a lateral distribution of the sputtered atoms on the target wafer. Subsequently the wafer is scanned by Total Reflection X-ray Fluorescence Spectrometry (TXRF) which is capable of detecting traces of metallic impurities on wafers down to 10-4 of an atomic monolayer. The sequence of ion-beam sputtering, deposition of the sputtered atoms and TXRF analysis results in an excellent depth resolution in the case of areal structures. Using an ion source of the Kaufmann type, an extrapolated perpendicular resolution better than 0.1 nm was obtained for a 1500 mm2 surface. For a surface area of 3 mm2 a depth resolution of 1 nm is expected. 1.4 nm was actually measured to be the width of a coherent Ti/Al-interface within a layered structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 407
Copyright
Copyright © Materials Research Society 1996

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References

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