Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T11:28:03.257Z Has data issue: false hasContentIssue false
  • English
  • Français

New MEMS Technology Using Multi-Layer NILC Poly-Si and NiSi Films

Published online by Cambridge University Press:  15 March 2011

W. M. Cheung ,
C. F. Cheng ,
M. C. Poon ,
M. Qin ,
C. Y. Yuen  and
Mansun Chan
W. M. Cheung
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Qin
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. Y. Yuen
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Get access

Abstract

A novel MEMS technology using multi-layer poly-silicon (poly-Si) is proposed. The poly-Si film is formed from the new Nickel-Induced-Lateral-Crystallization (NILC) method and has very large grain (>10νm) and near crystal quality. 700 nm thermal oxide was grown on a Si wafer. 100 nm LPCVD amorphous Si was deposited and followed by a 50 Å Ni deposition. The a-Si was crystallized at 550°C for 65 hours and subsequent 800°C for 2 hours to form the first (lower) NILC poly-Si layer. N-channel TFTs were fabricated on the NILC polysilicon layer. The process was repeated and a second (upper) polysilicon layer and TFTs were formed on top of the first polysilicon layer.

The lower polysilicon has slightly larger grains and better material quality. Thin-film- transistors (TFT) fabricated on the 3-dimensional (3-D) poly-Si layers have I-V characteristics similar to (>40%) silicon-on-insulator TFTs. While TFTs on lower layer have better mobility and device properties, TFTs on upper layer have better uniformity. The accumulated heating and other effects have also been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B5.24
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lee, S.W., Joo, S.K., “Low temperature poly-Si thin-film-transistor fabricated by metal- induced lateral crystallization”, IEEE Electron Device Letters, Vol. 17, No. 4, pp. 160–162, 1996.Google Scholar
2. Wang, Hongmei, Chan, Mansun, Jagar, Singh, Poon, M.C., Qin, Ming and Wang, Yangyuan, “High Performance Single Grain Thin Film Transistor (TFT) formed by Metal Induced Lateral Crystallization”, TED, August 1999.Google Scholar
3. Lee, S.W., Jeon, Y.C., and Joo, S.K., “Pd induced lateral crystallization of amorphous Si thin films,” Applied Physics Letter, vol. 66, no. 13, p. 1671–1673, 1995.Google Scholar
4. Lee, K. H., Fang, Y. K. and Fan, S. H., “Au metal-induced lateral crystallization (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate,” Electronics Letters, vol. 35, no. 13, p.1108–1109, 1999.Google Scholar
5. Yoon, S. Y., Kim, K. H., Kim, C. O., Oh, J. Y., Jang, J., “Low temperature metal induced crystallization of amorphous silicon using a Ni solution,” J. Appl. Phys., vol. 82, no. 11, p. 5865–5867, 1997.Google Scholar
6. Ho, C. H., Poon, M. C., Deng, F., Sin, J. K. O. and Lau, S. S., Thermal stability of cobalt and nickel silicide in different silicon substrates, to be published.Google Scholar
7. Chen, J., Colinge, J. P., Flandre, D., Gillon, R., Raskin, J. P. and Vanhoenacker, D., Comparison of TiSi2, CoSi2 and NiSi for thin-film silicon-on-insulator applications, J. Electrochem. Soc., 144(7), 1997, pp.2437–2442.Google Scholar