Published online by Cambridge University Press: 26 February 2011
The metal-organic vapor phase epitaxy (MOVPE) technique is perhaps themost versatile of the conventional III–V growth epitaxial systems. This versatility stems from the wide variety of chemical precursors available for the growth and doping of the films. Two examples of this versatility, carbon doping and selective epitaxy, are presented. Future progress within this technology will continue to be driven by the development of new chemistries.