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New Concepts in Modelling Interfacial Defects in Yba2Cu307−X

Published online by Cambridge University Press:  26 February 2011

John G. Darab ,
R.K. Maccrone  and
K. Rajan
John G. Darab
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute Troy, NY 12180-3590
R.K. Maccrone
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute Troy, NY 12180-3590
K. Rajan
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute Troy, NY 12180-3590
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Abstract

The {110} twin planes and the dislocations at orthogonal domain interfaces which form in YBa2Cu3O7−x during cooling from =950°C have been modelled using a simple geometric approach. A summary of the stereochemistries of the distorted copper(II)-oxygen complexes associated with these interfacial defects has been compiled. The localization of holes at these distorted copper(II) complexes and the effect they have on thesuperconducting properties of YBa2Cu307−x materials arediscussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 789
Copyright
Copyright © Materials Research Society 1991

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References

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