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A New Annealing Method to Obtain High Quality Poly-Si

Published online by Cambridge University Press:  28 February 2011

Yoon-Ho Song ,
Jong-Tae Baek ,
Kee-Soo Nam  and
Sang-Won Kang
Yoon-Ho Song
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Jong-Tae Baek
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Kee-Soo Nam
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
Sang-Won Kang
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8 Daedog Science Town, Daejeon, Korea
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Abstract

A new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 745
Copyright
Copyright © Materials Research Society 1993

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References

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