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Near Field Optical Spectroscopy of GaN/AlN Quantum Dots

Published online by Cambridge University Press:  01 February 2011

A. Neogi ,
B. P. Gorman ,
H. Morkoç ,
T. Kawazoe ,
M. Ohtsu  and
M. Kuball
A. Neogi
Affiliation:
Department of Physics and Materials Engineering, University of North Texas, Denton, TX, USA.
B. P. Gorman
Affiliation:
Department of Physics and Materials Engineering, University of North Texas, Denton, TX, USA.
H. Morkoç
Affiliation:
Department of Electrical Eng., Virginia Commonwealth University, Richmond, VA, USA.
T. Kawazoe
Affiliation:
Department of Electrical Engineering, University of Tokyo, Japan
M. Ohtsu
Affiliation:
Department of Electrical Engineering, University of Tokyo, Japan
M. Kuball
Affiliation:
Department of Electrical Engineering, University of Bristol, U.K.
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Abstract

We investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼ 50–60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [101 1] facets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E5.8
Copyright
Copyright © Materials Research Society 2005

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References

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