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Native Defects in Low Temperature GaAs and the Effect of Hydrogenation

Published online by Cambridge University Press:  26 February 2011

R. E. Pritchard ,
S. A. McQuaid ,
R. C. Newman ,
J. MÊkinen ,
H. J. Von Bardeleben  and
M. Missous
R. E. Pritchard
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ, UK
S. A. McQuaid
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ, UK Departamento de Ingenieria Electronica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
R. C. Newman
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College, Prince Consort Road, London SW7 2BZ, UK
J. MÊkinen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
H. J. Von Bardeleben
Affiliation:
Groupe de Physique des Solides, Centre National de la Recherche Scientifique, Université Paris VH, 2 place Jussieu, 75251 Paris CEDEX 05, France
M. Missous
Affiliation:
Department of Electrical Engineering, UMIST, PO Box 88, Manchester M60 1QD, UK
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Abstract

GaAs grown at low temperatures by MBE has been doped with shallow impurities to ∼1019 cm−3. A layer doped with Be acceptors was completely compensated and the simultaneous detection of AsGa0 and AsGa+ confirmed that the Fermi level was close to midgap and that compensation was partly related to AsGa defects. There was no evidence for the incorporation of VGa in this layer. For Si-doped samples, more than 80 % of the donors were compensated and the detection of SiGa-VGa pairs by infrared localized vibrational mode (LVM) spectroscopy indicated that VGa were at least partly responsible. Increasing the Si concentration suppressed the incorporation of AsGa. Exposure of the Be-doped layer to a hydrogen plasma, generated a LVM near 2000 cm−1 which may be the stretch mode of a AsGa-H-VAs defect complex. For Si-doped layers, two stretch modes at 1764 cm−1 and 1773 cm−1 and a wag mode at 779 cm−1 relating to a H-defect complex were detected and we argue that the complex could be a passivated As antisite. The detection of characteristic hydrogen-native defect LVMs may provide a new method for the identification of intrinsic defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 441
Copyright
Copyright © Materials Research Society 1995

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