Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-12-01T00:35:44.909Z Has data issue: false hasContentIssue false

Nanoscale Charge Transport Characteristics at Perovskite Interfaces – a Holistic Perspective

Published online by Cambridge University Press:  16 April 2014

Ramsey Kraya
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
Laura Kraya
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
Get access

Abstract

Here we investigate how charge transport properties scale down to the nanoscale regime, comparing the properties to standard semiconductor materials and providing a perspective on what it means to device manufacturing. Strontium titanate - the prototypical oxide material - has been widely studied for applications in thermoelectrics, nanoelectronics, catalysis, and other uses. We investigated how charge transport is effected at interfaces to strontium titanate under a wide range of conditions - by varying contact size, interface shape, dopant concentration, surface structures and in various combinations and relate the results to experiments utilizing standard semiconducting materials such as silicon and gallium arsenide. Also, the results of the analysis has wide ranging implications, especially for ferroelectric perovskite materials and serves as the basis for understanding and controlling switching effects - both polarization and oxygen migration based switching.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Winfried, M. Electron Properties of Semiconductors. (Springer-Verlag, New York; 2004).Google Scholar
Kraya, R., Kraya, L.Y. & Bonnell, D.A. Orientation Controlled Schottky Barrier Formation at Au Nanoparticle-SrTiO3 Interfaces. Nano Letters 10, 12241228 (2010).10.1021/nl903651pCrossRefGoogle ScholarPubMed
Kraya, R.A. & Bonnell, D.A. Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy. Ieee Transactions on Nanotechnology 9, 741744 (2010).10.1109/TNANO.2010.2047024CrossRefGoogle Scholar
Kraya, R.A. & Kraya, L.Y. Controlling the Interface Dynamics at Au Nanoparticle - Oxide Interfaces. Nanotechnology, IEEE Transactions on 11, 3 (2012).10.1109/TNANO.2011.2160458CrossRefGoogle Scholar
Smit, G.D.J., Rogge, S. & Klapwijk, T.M. Enhanced tunneling across nanometer-scale metal-semiconductor interfaces. Applied Physics Letters 80, 25682570 (2002).10.1063/1.1467980CrossRefGoogle Scholar
Smit, G.D.J., Flokstra, M.G., Rogge, S. & Klapwijk, T.M. Scaling of micro-fabricated nanometer-sized Schottky diodes. Microelectronic Engineering 64, 429433 (2002).10.1016/S0167-9317(02)00817-1CrossRefGoogle Scholar
Smit, G.D.J., Rogge, S. & Klapwijk, T.M. Scaling of nano-Schottky-diodes. Applied Physics Letters 81, 38523854 (2002).10.1063/1.1521251CrossRefGoogle Scholar
Kraya, R. & Kraya, L. The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces. Journal of Applied Physics 111, 4 (2012).10.1063/1.3693542CrossRefGoogle Scholar
Kraya, L.Y. & Kraya, R. Determination of the electronic structure of ferroelectric surfaces by scanning tunneling microscopy. Journal of Applied Physics 111 (2012).10.1063/1.3675160CrossRefGoogle Scholar
Kraya, R.A. & Kraya, L.Y. Size dependent polarization reversal at nanoscale metal-ferroelectric interfaces. Journal of Applied Physics 112 (2012).10.1063/1.4769437CrossRefGoogle Scholar