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Nanoindentation of silicon: hardness and semiconductor-metal phase transition

Published online by Cambridge University Press:  01 February 2011

M. Hebbache
M. Hebbache*
Affiliation:
Laboratoire de Physique Théorique de la Matière Condensée, Université Paris 7, 2 place Jussieu, F-75251 Paris Cedex 05, France.
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Abstract

The hardness of a thin film of silicon is studied in the framework of the 3D Hertzian contact theory. The anisotropy and the anharmonicity of silicon are taken into account for the first time. It is shown that the contribution of plasticity to the hardness of silicon is significant while we know that it possesses strong covalent bonds and dislocations must be thermally activated in this material. The semiconductor-metal phase transition, driven by the tetragonal shear strain superimposed on the non-hydrostatic pressure generated by a diamond indenter, is also studied. For this aim, the Landau theory of phase transitions and the contact theory are combined. The comparison with available nanoindentation experiments is made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 791: Symposium Q – Mechanical Properties of Nanostructured Materials and Nanocomposites , 2003 , Q6.3
Copyright
Copyright © Materials Research Society 2004

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