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Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

Published online by Cambridge University Press:  10 February 2011

J. G. Fleming ,
E. Chow  and
S.-Y. Lin
J. G. Fleming
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
E. Chow
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
S.-Y. Lin
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
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Abstract

Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 631: Symposium AA – Millimeter-/Submillimeter-Wave Technology Materials, Devices and Diagnostics , 2000 , AA2.2
Copyright
Copyright © Materials Research Society 2000

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References

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