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Nano-engineering with a focused helium ion beam

Published online by Cambridge University Press:  13 September 2011

Diederik J. Maas
Affiliation:
TNO - van Leeuwenhoek Laboratory, Stieltjesweg 1, 2826 CK Delft, The Netherlands
Emile W. van der Drift
Affiliation:
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
Emile van Veldhoven
Affiliation:
TNO - van Leeuwenhoek Laboratory, Stieltjesweg 1, 2826 CK Delft, The Netherlands
Jeroen Meessen
Affiliation:
ASML Netherlands B.V., de Run 6501, 5500 AH Veldhoven, The Netherlands
Maria Rudneva
Affiliation:
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
Paul F. A. Alkemade
Affiliation:
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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Abstract

Although Helium Ion Microscopy (HIM) was introduced only a few years ago, many new application fields are budding. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample material at and just below its surface. In particular, the HIM secondary electron (SE) signal stems from an area that is very well localized around the point of incidence of the primary beam. This makes the HIM well-suited for both high-resolution imaging as well as high resolution nanofabrication. Another advantage in nanofabrication is the low ion backscattering fraction, leading to a weak proximity effect. The lack of a quantitative materials analysis mode (like EDX in Scanning Electron Microscopy, SEM) and a relatively low beam current as compared to the SEM and the Gallium Focused Ion Beam are the present drawbacks of the HIM.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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