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Nanoelectrode Lithography

Published online by Cambridge University Press:  01 February 2011

Atsushi Yokoo ,
Hideo Namatsu  and
Masatoshi Oda
Atsushi Yokoo
Affiliation:
[email protected], NTT Basic Research Laboratories, Optical Science Laboratory, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref.,, Atsugi-Shi, 243-0198, Japan, +81-46-240-3205, +81-46-240-4305
Hideo Namatsu
Affiliation:
[email protected], NTT Advanced Technology Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, 243-0198, Japan
Masatoshi Oda
Affiliation:
[email protected], NTT-AT Nanofabrication Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, 243-0198, Japan
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Abstract

Nanoelectrode lithography is a pattern duplication method which combine template and electrochemical reaction. With the nanoelectrode lithography, electrochemical reaction occurs along with the conductive area of the template, and oxide pattern can be directly fabricated on a surface of semiconductor or metal layer. This "Resist-less patterning" method may have advantage for precise patterning in the future.

Keywords

lithography (removal)nanostructureoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O10-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Terris, B. D., Mamin, H. J., Best, M. E., Logan, J. A., Rugar, D., and Rishton, S. A.: Appl. Phys. Lett., 69, 4262 (1996)Google Scholar
2. Chou, S. Y., Krauss, P. R., and Renstrom, P. J., J. Vac. Sci. Technol. B, 14, 4129 (1996)Google Scholar
3. Colburn, M., Johnson, S., Stewart, M., Damle, S., Bailey, T., Choi, B., Wedlake, M., Michaelson, T., Sreenivasan, S. V., Ekerdt, J., and Willson, C. G., Proc. SPIE, 3676, 379 (1999)Google Scholar
4. Pang, S. W., Tamamura, T., Nakao, M., Ozawa, A., and Masuda, H., J. Vac. Sci. Technol. B, 16, 1145 (1998)Google Scholar
5. Snow, E. S., Campbell, P. M., and McMarr, P. J., Appl. Phys. Lett., 63, 749 (1993)Google Scholar
6. Majumder, A., Oden, P. I., Carrejo, J. P., Nagahara, L. A., Graham, J. J., and Alexander, J., Appl. Phys. Lett., 61, 2293 (1992)Google Scholar
7. Matsuzaki, Y., Hasui, S., Kamada, S., Yamada, A., and Konagai, M., Jpn. J. Appl. Phys., 40, 4325 (2001)Google Scholar
8. Yokoo, A., Jpn. J. Appl. Phys., 42, L92 (2003).Google Scholar
9. Yokoo, A. and Sasaki, S., Jpn. J. Appl. phys., 44, 1119 (2005).Google Scholar
10. Sugimura, H., Yamamoto, T., Nakagiri, N., Miyashita, M., and Onuki, T., Appl. Phys. Lett., 65, 1569 (1994)Google Scholar
11. Yokoo, A., The 4th International Conference on Nanoimprint and Nanoprint Technology Digest of Papers, 20P-5–12 (2005).Google Scholar
12. Yokoo, A., J. Vac. Sci. Technol. B, 21, 2966 (2003).Google Scholar