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Nanocrystalline Gallium Nitride from Gallium Azide Precursors

Published online by Cambridge University Press:  10 February 2011

A. H. Manz ,
A. C. Frank ,
H. Sussek ,
F. Stowasser  and
R. A. Fischer
A. H. Manz
Affiliation:
Anorganisch-chemisches Institut, Ruprecht-Karls Universität, Im Neuenheimer Feld 270, D-69120 Heidelberg, Germany
A. C. Frank
Affiliation:
Anorganisch-chemisches Institut, Ruprecht-Karls Universität, Im Neuenheimer Feld 270, D-69120 Heidelberg, Germany
H. Sussek
Affiliation:
Anorganisch-chemisches Institut, Ruprecht-Karls Universität, Im Neuenheimer Feld 270, D-69120 Heidelberg, Germany
F. Stowasser
Affiliation:
Anorganisch-chemisches Institut, Ruprecht-Karls Universität, Im Neuenheimer Feld 270, D-69120 Heidelberg, Germany
R. A. Fischer
Affiliation:
Anorganisch-chemisches Institut, Ruprecht-Karls Universität, Im Neuenheimer Feld 270, D-69120 Heidelberg, Germany
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Abstract

High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized using the thermally induced explosion of the molecular precursor (Et3N)Ga(N3)3. The method allows the control of the particle size from 2 to 24 nm. X-ray diffraction and Rietveld simulations revealed a platelet-like shape of the larger particles in contrast to the rather spherical smaller crystallites. An increasing blue-shift of the high energy luminescence with decreasing crystal size was found (up to 4.4 eV at 5 K). A preliminary analysis of the surface chemistry of has been carried out based on silylation and deuteration experiments and IR spectroscopy, indicating hydrophilic, O-H and N-H terminated particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 501: Symposium FF – Surface Controlled Nanoscale Materials for High-Added… , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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